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Power MOSFETs 120V 120A 3.8mΩ@100A,10V 20V 300W N-Channel -55°C~175°C TO-263-3

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MPN IPB038N12N3 G
Other # IPB038N12N3GATMA1
Mfr. Infineon
Oneyac # A-IPB038N12N3 G
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description 120V 120A 3.8mΩ@100A,10V 20V 300W N-Channel -55°C~175°C TO-263-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Drain source voltage Vds 120V
Continuous drain current Id 120A
Rds On(Max)@Id,Vgs 3.8mΩ@100A,10V
Gate voltage Vgs 20V
Pd power dissipation (Max) 300W
FET type N-Channel
working temperature -55°C~175°C
Package/Enclosure TO-263-3
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