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Power MOSFETs ±20V 1W(Ta) 57.5mΩ@3.1A,10V -55°C~150°C(TJ) N-Channel 5.1A 55V SOT-223

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MPN IRFL024ZTRPBF
Mfr. Infineon
Oneyac # A-IRFL024ZTRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 55 V 2.8 W 9.1 nC Surface Mount HEXFET Power Mosfet - SOT-223

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Gate voltage Vgs ±20V
Pd power dissipation (Max) 1W(Ta)
Rds On(Max)@Id,Vgs 57.5mΩ@3.1A,10V
working temperature -55°C~150°C(TJ)
FET type N-Channel
Continuous drain current Id 5.1A
Drain source voltage Vds 55V
Package/Enclosure SOT-223
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In Stock :  2,500 Lead Time:16W

Qty. Unit Price Ext. Price
1+ : Inquiry
When unpacking without original label and tray!
MPQ 2,500 ETD HK 5~7 Working Days
Min. 1 Mult. 1

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