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Power MOSFETs ±20V 200W(Tc) -55°C~175°C(TJ) 12mΩ@50A,10V N-Channel 60V 84A D2PAK

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MPN IRF1010ESTRLPBF
Mfr. Infineon
Oneyac # A-IRF1010ESTRLPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single HexFet 60 V 200 W 130 nC Surface Mount Mosfet - TO-263-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Gate voltage Vgs ±20V
Pd power dissipation (Max) 200W(Tc)
working temperature -55°C~175°C(TJ)
Rds On(Max)@Id,Vgs 12mΩ@50A,10V
FET type N-Channel
Drain source voltage Vds 60V
Continuous drain current Id 84A
Package/Enclosure D2PAK
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A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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