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Power MOSFETs ±20V 200W(Tc) -55°C~175°C(TJ) 4.7mΩ@104A,10V N-Channel 55V 135A D2PAK

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MPN IRF2805STRLPBF
Mfr. Infineon
Oneyac # A-IRF2805STRLPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 55 V 4.7 mOhm 200 W Surface Mount HEXFET® Power MOSFET - TO-262

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Gate voltage Vgs ±20V
Pd power dissipation (Max) 200W(Tc)
working temperature -55°C~175°C(TJ)
Rds On(Max)@Id,Vgs 4.7mΩ@104A,10V
FET type N-Channel
Drain source voltage Vds 55V
Continuous drain current Id 135A
Package/Enclosure D2PAK
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