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Power MOSFETs ±20V 200W(Tc) -55°C~175°C(TJ) 7mΩ@82A,10V N-Channel 75V 106A D2PAK

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MPN IRF3808STRLPBF
Mfr. Infineon
Oneyac # A-IRF3808STRLPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description IRF3808S Series N-Channel 75 V 7 mO 200 W HEXFET MosFet Surface Mount - D2-PAK-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Gate voltage Vgs ±20V
Pd power dissipation (Max) 200W(Tc)
working temperature -55°C~175°C(TJ)
Rds On(Max)@Id,Vgs 7mΩ@82A,10V
FET type N-Channel
Drain source voltage Vds 75V
Continuous drain current Id 106A
Package/Enclosure D2PAK
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