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Power MOSFETs ±20V 2.5W(Ta) -55°C~150°C(TJ) 9.4mΩ@12A,10V N-Channel 60V 12A 8-SO

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MPN IRF7855TRPBF
Mfr. Infineon
Oneyac # A-IRF7855TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description ±20V 2.5W(Ta) -55°C~150°C(TJ) 9.4mΩ@12A,10V N-Channel 60V 12A 8-SO

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Vgs (th) at different IDs (maximum value) 4.9V @ 100µA
Gate charge (Qg) at different Vgs (maximum value) 39nC
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1560pF
Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
Pd power dissipation (Max) 2.5W(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 4.9V @ 100µA
Gate charge (Qg) at different Vgs (maximum value) 39nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 1560pF @ 25V
Rds On(Max)@Id,Vgs 9.4mΩ@12A,10V
FET type N-Channel
Drain source voltage Vds 60V
Continuous drain current Id 12A
Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
Package/Enclosure 8-SO
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