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Power MOSFETs ±20V 300W(Tc) -55°C~175°C(TJ) 3mΩ@75A,10V N-Channel 60V 210A TO-220AB

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MPN IRFB3206GPBF
Mfr. Infineon
Oneyac # A-IRFB3206GPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single N-Channel 60 V 3 mOhm 170 nC HEXFET Power Mosfet Surface Mount - TO-220AB

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Gate voltage Vgs ±20V
Pd power dissipation (Max) 300W(Tc)
working temperature -55°C~175°C(TJ)
Rds On(Max)@Id,Vgs 3mΩ@75A,10V
FET type N-Channel
Drain source voltage Vds 60V
Continuous drain current Id 210A
Package/Enclosure TO-220AB
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