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Power MOSFETs TO-253-2 N-Channel 35W 190mΩ@5.2A,10V -55°C~175°C ±20V 10V 8.7A

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MPN IRFR120ZTRPBF
Mfr. Infineon
Oneyac # A-IRFR120ZTRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description IRFR120Z Series 100 V 8.7 A 190 mOhm SMT HEXFET® Power MOSFET - TO-252AA

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Package/Enclosure TO-253-2
FET type N-Channel
Pd power dissipation (Max) 35W
Rds On(Max)@Id,Vgs 190mΩ@5.2A,10V
working temperature -55°C~175°C
Gate voltage Vgs ±20V
Drain source voltage Vds 10V
Continuous drain current Id 8.7A
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