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Power MOSFET ±20V 1.25W(Ta) -55°C~150°C(TJ) 98mΩ@3A,10V P-Channel 30V 3A SOT-23

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MPN IRLML5203TRPBF
Mfr. Infineon
Oneyac # A-IRLML5203TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single P-Channel 30 V 1.25 W 9.5 nC Hexfet Power Mosfet Surface Mount - MICRO-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 14nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 510pF @ 25V
Pd power dissipation (Max) 1.25W(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 14nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 510pF @ 25V
Rds On(Max)@Id,Vgs 98mΩ@3A,10V
FET type P-Channel
Drain source voltage Vds 30V
Continuous drain current Id 3A
Package/Enclosure SOT-23
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