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Power MOSFETs ±12V 1.3W(Ta) -55°C~150°C(TJ) 46mΩ@4.1A,4.5V N-Channel 20V 4.1A Micro3™/SOT-23

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MPN IRLML6246TRPBF
Mfr. Infineon
Oneyac # A-IRLML6246TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description ±12V 1.3W(Ta) -55°C~150°C(TJ) 46mΩ@4.1A,4.5V N-Channel 20V 4.1A Micro3™/SOT-23

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Vgs (th) at different IDs (maximum value) 1.1V @ 5µA
Gate charge (Qg) at different Vgs (maximum value) 3.5nC @ 4.5V
Gate voltage Vgs ±12V
Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 16V
Pd power dissipation (Max) 1.3W(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
Vgs (th) at different IDs (maximum value) 1.1V @ 5µA
Gate charge (Qg) at different Vgs (maximum value) 3.5nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 16V
Rds On(Max)@Id,Vgs 46mΩ@4.1A,4.5V
FET type N-Channel
Drain source voltage Vds 20V
Continuous drain current Id 4.1A
Package/Enclosure Micro3™/SOT-23
Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 16V
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