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Power MOSFET ±12V 540mW(Ta) -55°C~150°C(TJ) 600mΩ@610mA,4.5V P-Channel 20V 0.78A Micro3™/SOT-23

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MPN IRLML6302TRPBF
Mfr. Infineon
Oneyac # A-IRLML6302TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single P-Channel 20 V 540 W 2.4 nC Hexfet Power Mosfet Surface Mount - MICRO-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 3.6nC @ 4.45V
Gate voltage Vgs ±12V
Input capacitance (Ciss) at different Vds (maximum value) 97pF @ 15V
Pd power dissipation (Max) 540mW(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 2.7V,4.5V
Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 3.6nC @ 4.45V
Input capacitance (Ciss) at different Vds (maximum value) 97pF @ 15V
Rds On(Max)@Id,Vgs 600mΩ@610mA,4.5V
FET type P-Channel
Drain source voltage Vds 20V
Continuous drain current Id 0.78A
Package/Enclosure Micro3™/SOT-23
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