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Power MOSFETs ±12V 1.3W(Ta) -55°C~150°C(TJ) 63mΩ@3.4A,4.5V N-Channel 30V 3.4A Micro3™/SOT-23

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MPN IRLML6346TRPBF
Mfr. Infineon
Oneyac # A-IRLML6346TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 30 V 80 mOhm 2.9 nC 1.3 W Silicon SMT Mosfet - SOT-23

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
Gate charge (Qg) at different Vgs (maximum value) 2.9nC
Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
Gate voltage Vgs ±12V
Input capacitance (Ciss) at different Vds (maximum value) 270pF
Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 24V
Pd power dissipation (Max) 1.3W(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
Gate charge (Qg) at different Vgs (maximum value) 2.9nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 270pF @ 24V
Rds On(Max)@Id,Vgs 63mΩ@3.4A,4.5V
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 3.4A
Package/Enclosure Micro3™/SOT-23
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In Stock :  0 Lead Time:17W

Qty. Unit Price Ext. Price
3000+ : Inquiry
When unpacking without original label and tray!
MPQ 3,000 ETD HK 17W
For L/T orders  consult CS for MOQ.

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