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Power MOSFETs 150°C(TJ) TO-220-3 10A 40W 560mΩ 800V 3V

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MPN R8010ANX
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-R8010ANX
Supplier Oneyac
Product Cycle

Production (Not Recommended for New Design)

Unleaded/RoHs Lead Free/Rohs
Description 150°C(TJ) TO-220-3 10A 40W 560mΩ 800V 3V

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 62nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 1750pF @ 25V
working temperature 150°C(TJ)
Package/Enclosure TO-220-3
Continuous drain current Id 10A
Pd power dissipation (Max) 40W
QG gate charge 62nC
Rds On(Max)@Id,Vgs 560mΩ
Drain source voltage Vds 800V
Gate voltage Vgs 3V
rise time 54ns
Descent time 25ns
Typical shutdown delay time 97ns
Typical connection delay time 43ns
width 10.3mm
Forward transconductance - minimum value 2.2S
Series R8010ANX
Number of channels 1Channel
to configure Single
length 15.4mm
height 4.8mm
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In Stock :  165

Qty. Unit Price Ext. Price
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