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Power MOSFET ±8V 1.3W(Ta) 50mΩ@4.3A,4.5V -55°C~150°C(TJ) P-Channel 4.3A 12V SOT-23

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MPN IRLML6401TRPBF
Mfr. Infineon
Oneyac # A-IRLML6401TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description MOSFET P-CH 12V 4.3A SOT23

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
Vgs (th) at different IDs (maximum value) 950mV @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 15nC @ 5V
Input capacitance (Ciss) at different Vds (maximum value) 830pF @ 10V
Gate voltage Vgs ±8V
Pd power dissipation (Max) 1.3W(Ta)
Rds On(Max)@Id,Vgs 50mΩ@4.3A,4.5V
working temperature -55°C~150°C(TJ)
FET type P-Channel
Continuous drain current Id 4.3A
Drain source voltage Vds 12V
Package/Enclosure SOT-23
Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 5V
Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 10V
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In Stock :  3,000 Lead Time:12W

Qty. Unit Price Ext. Price
1+ : Inquiry
When unpacking without original label and tray!
MPQ 3,000 ETD HK 5~7 Working Days
Min. 1 Mult. 1

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