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Power MOSFETs 55A(Tc) ±25V 3.75W(Ta),155W(Tc) 26m Ohms@27.5A,10V -55°C~175°C(TJ) TO-263-3,D²Pak,TO-263AB D2PAK N-Channel 100V 55A 26 milliohms @ 27.5A, 10V -55°C ~ 175°C(TJ) TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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MPN FQB55N10TM
Mfr. ON Semiconductor
Oneyac # A-FQB55N10TM
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 100 V 0.026 Ohm Surface Mount Mosfet - D2PAK-3

Documents

Datasheet

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Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Continuous drain current Id 55A(Tc)
Gate voltage Vgs ±25V
Pd power dissipation (Max) 3.75W(Ta),155W(Tc)
Rds On(Max)@Id,Vgs 26m Ohms@27.5A,10V
working temperature -55°C~175°C(TJ)
Package/Enclosure TO-263-3,D²Pak,TO-263AB
Package/Enclosure D2PAK
FET type N-Channel
Drain source voltage Vds 100V
Continuous drain current Id 55A
Rds On(Max)@Id,Vgs 26 milliohms @ 27.5A, 10V
working temperature -55°C ~ 175°C(TJ)
Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
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