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Universal MOSFET 1.5A(Ta) ±20V 500mW(Ta) 125m Ohms@1.5A,10V -55°C~150°C(TJ) TO-236-3,SC-59,SOT-23-3 SuperSOT P-Channel 30V 1.5A 125 milliohms @ 1.5A, 10V -55°C ~ 150°C(TJ)

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MPN FDN358P
Mfr. ON Semiconductor
Oneyac # A-FDN358P
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3

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Datasheet

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Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFET
Series PowerTrench®
Continuous drain current Id 1.5A(Ta)
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 5.6nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 182pF @ 15V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 500mW(Ta)
Rds On(Max)@Id,Vgs 125m Ohms@1.5A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
Package/Enclosure SuperSOT
FET type P-Channel
Drain source voltage Vds 30V
Continuous drain current Id 1.5A
Vgs (th) at different IDs (maximum value) 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 5.6nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 182pF @ 15V
Power Rating 500mW(Ta)
Rds On(Max)@Id,Vgs 125 milliohms @ 1.5A, 10V
working temperature -55°C ~ 150°C(TJ)
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