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Small Signal MOSFETs ±8V 350mW(Ta) 450m Ohms@500mA,4.5V -55°C~150°C(TJ) SOT-23 N-Channel 25V 0.68A 680mA(Ta) 450 milliohms @ 500mA, 4.5V -55°C ~ 150°C(TJ) TO-236-3,SC-59,SOT-23-3

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MPN FDV303N
Mfr. ON Semiconductor
Oneyac # A3-FDV303N
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Small Signal MOSFETs
Gate voltage Vgs ±8V
Pd power dissipation (Max) 350mW(Ta)
Rds On(Max)@Id,Vgs 450m Ohms@500mA,4.5V
working temperature -55°C~150°C(TJ)
Package/Enclosure SOT-23
FET type N-Channel
Drain source voltage Vds 25V
Continuous drain current Id 0.68A
Continuous drain current Id 680mA(Ta)
Rds On(Max)@Id,Vgs 450 milliohms @ 500mA, 4.5V
working temperature -55°C ~ 150°C(TJ)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
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