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Universal MOSFET 1.9A(Ta) ±20V 500mW(Ta) 60m Ohms@2.2A,10V -55°C~150°C(TJ) TO-236-3,SC-59,SOT-23-3 SuperSOT N-Channel 30V 1.9A 60 milliohms @ 2.2A, 10V -55°C ~ 150°C(TJ)

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MPN FDN357N
Mfr. ON Semiconductor
Oneyac # A3-FDN357N
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor

Documents

Datasheet

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Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFET
Continuous drain current Id 1.9A(Ta)
Gate voltage Vgs ±20V
Pd power dissipation (Max) 500mW(Ta)
Rds On(Max)@Id,Vgs 60m Ohms@2.2A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
Package/Enclosure SuperSOT
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 1.9A
Rds On(Max)@Id,Vgs 60 milliohms @ 2.2A, 10V
working temperature -55°C ~ 150°C(TJ)
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