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Power MOSFETs N-Channel 600V 9A(Tc) ±20V 40W(Tc) 535mΩ@2.8A,10V 150°C(TJ) TO-220-3

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MPN R6009ENX
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-R6009ENX
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description N-Channel 600V 9A(Tc) ±20V 40W(Tc) 535mΩ@2.8A,10V 150°C(TJ) TO-220-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
FET type N-Channel
Drain source voltage Vds 600V
Continuous drain current Id 9A(Tc)
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 430pF @ 25V
Pd power dissipation (Max) 40W(Tc)
Rds On(Max)@Id,Vgs 535mΩ@2.8A,10V
working temperature 150°C(TJ)
Package/Enclosure TO-220-3
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In Stock :  100

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