Power MOSFETs 150°C(TJ) HSMT 10A 2W 14.3mΩ@10A,10V 40V ±20V N-Channel
| MPN | RQ3G100GNTB |
|---|---|
| Mfr. |
ROHM Semiconductor
Authorized Distributor
|
| Oneyac # | A3-RQ3G100GNTB |
| Supplier | Oneyac |
| Product Cycle |
Production (Not Recommended for New Design) |
| Unleaded/RoHs |
Lead Free/Rohs
|
| Description | MOSFET |
Documents Send to email
| Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | Power MOSFETs | |
| Series | RQ | |
| Drive voltage @ Rds On (Max), Rds On (Min) | 4.5V,10V | |
| Vgs (th) at different IDs (maximum value) | 2.5V @ 1mA | |
| Gate charge (Qg) at different Vgs (maximum value) | 8.4nC @ 10V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 615pF @ 20V | |
| working temperature | 150°C(TJ) | |
| Package/Enclosure | HSMT | |
| Continuous drain current Id | 10A | |
| Pd power dissipation (Max) | 2W | |
| QG gate charge | 8.4nC | |
| Rds On(Max)@Id,Vgs | 14.3mΩ@10A,10V | |
| Drain source voltage Vds | 40V | |
| Gate voltage Vgs | ±20V | |
| rise time | 4.2ns | |
| Descent time | 3.2ns | |
| Typical shutdown delay time | 23.1ns | |
| Typical connection delay time | 8ns | |
| Number of channels | 1Channel | |
| to configure | Single | |
| FET type | N-Channel |
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