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Power MOSFETs ±20V 15W(Tc) 23mΩ@7.5A,10V -55°C~150°C(TJ) HSMT P-Channel 30V 7.5A

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MPN RQ3E075ATTB
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-RQ3E075ATTB
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description ±20V 15W(Tc) 23mΩ@7.5A,10V -55°C~150°C(TJ) HSMT P-Channel 30V 7.5A

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 10.4nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 930pF @ 15V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 15W(Tc)
Rds On(Max)@Id,Vgs 23mΩ@7.5A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure HSMT
FET type P-Channel
Drain source voltage Vds 30V
Continuous drain current Id 7.5A
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In Stock :  350

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