Power MOSFETs 11A(Ta),35A(Tc) P-Channel ±20V 12.4mΩ@11A,10V 2W(Ta) 150°C(TJ) 40 V 8-PowerVDFN
| MPN | RQ3G110ATTB |
|---|---|
| Mfr. |
ROHM Semiconductor
Authorized Distributor
|
| Oneyac # | A33-RQ3G110ATTB |
| Supplier | Oneyac |
| Product Cycle |
Production |
| Unleaded/RoHs |
Lead Free/Rohs
|
| Description | PCH -40V -35A, HSMT8, POWER MOSF |
Documents Send to email
| Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | Power MOSFETs | |
| Continuous drain current Id | 11A(Ta),35A(Tc) | |
| FET type | P-Channel | |
| Gate voltage Vgs | ±20V | |
| Rds On(Max)@Id,Vgs | 12.4mΩ@11A,10V | |
| Vgs (th) (maximum value) for different IDs | 2.5V @ 1mA | |
| Input capacitance (Ciss) at different Vds (maximum value) | 2750 pF @ 20 V | |
| Gate charge (Qg) at different Vgs (maximum value) | 46 nC @ 10 V | |
| Pd power dissipation (Max) | 2W(Ta) | |
| working temperature | 150°C(TJ) | |
| technology | MOSFET (Metal Oxide) | |
| Drain source voltage Vds | 40 V | |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V | |
| Package/Enclosure | 8-PowerVDFN |
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