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Power MOSFETs 11A 2W 11.3mΩ@11A,10V 30V ±20V DFN2020-8 N-Channel -55°C~150°C

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MPN RF4E110GNTR
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-RF4E110GNTR-0
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 11A 2W 11.3mΩ@11A,10V 30V ±20V DFN2020-8 N-Channel -55°C~150°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Continuous drain current Id 11A
Pd power dissipation (Max) 2W
QG gate charge 7.4nC
Rds On(Max)@Id,Vgs 11.3mΩ@11A,10V
Drain source voltage Vds 30V
Gate voltage Vgs ±20V
rise time 5.5ns
Descent time 3ns
Typical shutdown delay time 21ns
Typical connection delay time 9ns
Package/Enclosure DFN2020-8
FET type N-Channel
Forward transconductance - minimum value 6S
Series RF4E110GN
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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In Stock :  2,490

Qty. Unit Price Ext. Price
60+ $0.3417 $20.502
100+ $0.2702 $27.02
300+ $0.223 $66.9
500+ $0.2133 $106.65
1,000+ $0.206 $206

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 60 Mult. 1

Special Note

Production Year: 2022

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