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Power MOSFETs 8A 2W 17.6mΩ 30V 2.5V DFN2020-8 N-Channel -55°C~150°C

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MPN RF4E080GNTR
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-RF4E080GNTR-0
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 8A 2W 17.6mΩ 30V 2.5V DFN2020-8 N-Channel -55°C~150°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Continuous drain current Id 8A
Pd power dissipation (Max) 2W
QG gate charge 5.8nC
Rds On(Max)@Id,Vgs 17.6mΩ
Drain source voltage Vds 30V
Gate voltage Vgs 2.5V
rise time 3.6ns
Descent time 2.4ns
Typical shutdown delay time 17.3ns
Typical connection delay time 6.9ns
Package/Enclosure DFN2020-8
FET type N-Channel
Forward transconductance - minimum value 5S
Series RF4E080GN
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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In Stock :  2,597

Qty. Unit Price Ext. Price
70+ $0.3138 $21.966
100+ $0.2423 $24.23
300+ $0.1939 $58.17
500+ $0.1842 $92.1
1,000+ $0.1769 $176.9

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 70 Mult. 1

Special Note

Production Year: 2022

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