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Power MOSFET 18A 2W 4.3mΩ@18A,10V 30V ±20V HSMT-8 N-Channel -55°C~150°C

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MPN RQ3E180GNTB
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-RQ3E180GNTB-0
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 18A 2W 4.3mΩ@18A,10V 30V ±20V HSMT-8 N-Channel -55°C~150°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Continuous drain current Id 18A
Pd power dissipation (Max) 2W
QG gate charge 22.4nC
Rds On(Max)@Id,Vgs 4.3mΩ@18A,10V
Drain source voltage Vds 30V
Gate voltage Vgs ±20V
rise time 6.9ns
Descent time 10.2ns
Typical shutdown delay time 56.8ns
Typical connection delay time 16.5ns
Package/Enclosure HSMT-8
FET type N-Channel
Forward transconductance - minimum value 17S
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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In Stock :  104

Qty. Unit Price Ext. Price
30+ $0.7156 $21.468
50+ $0.481 $24.05
100+ $0.4015 $40.15

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 30 Mult. 1

Special Note

Production Year: 2022

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