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Power MOSFETs N-Channel ±20V 2W(Ta) 28.6mΩ@7A,10V 150°C(TJ) HUML2020L8 30V 7A

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MPN RF4E070BNTR
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3x-RF4E070BNTR
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 30V, 7A, 28.6 MOHM, PQFN 2X2

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
FET type N-Channel
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 8.9nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 410pF @ 15V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 2W(Ta)
Rds On(Max)@Id,Vgs 28.6mΩ@7A,10V
working temperature 150°C(TJ)
Package/Enclosure HUML2020L8
Drain source voltage Vds 30V
Continuous drain current Id 7A
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In Stock :  12,000 Lead Time:16W

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