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Power MOSFETs 12A(Tc) ±20V 2.5W(Ta) 10m Ohms@12A,10V -55°C~150°C(TJ) 8-SOIC (0.154 ", 3.90mm wide) SOIC N-Channel 60V 12A 8-SOIC

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MPN FDS5672
Mfr. ON Semiconductor
Oneyac # A-FDS5672
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 60 V 10 mOhms PowerTrench Mosfet SOIC-8

Documents

Datasheet

No Datasheet

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Continuous drain current Id 12A(Tc)
Gate voltage Vgs ±20V
Pd power dissipation (Max) 2.5W(Ta)
Rds On(Max)@Id,Vgs 10m Ohms@12A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure 8-SOIC (0.154 ", 3.90mm wide)
Package/Enclosure SOIC
FET type N-Channel
Drain source voltage Vds 60V
Continuous drain current Id 12A
Package/Enclosure 8-SOIC
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