Small Signal MOSFETs N-Channel 50V 220mA(Ta) ±12V 350mW(Ta) 1.6 Ohms@50mA,5V -55°C~150°C(TJ) TO-236-3,SC-59,SOT-23-3 1.6 ohms @ 50mA, 5V -55°C~150°C(TJ)
| MPN | BSS138K |
|---|---|
| Mfr. | ON Semiconductor |
| Oneyac # | A36-BSS138K |
| Supplier | Oneyac |
| Unleaded/RoHs | Lead Free/Rohs |
| Description | N-Channel 50 V Logic Level Enhancement Mode Field Effect Transistor |
Documents
| Datasheet |
No Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | Small Signal MOSFETs | |
| FET type | N-Channel | |
| Drain source voltage Vds | 50V | |
| Continuous drain current Id | 220mA(Ta) | |
| Drive voltage @ Rds On (Max), Rds On (Min) | 1.8V,2.5V | |
| Vgs (th) at different IDs (maximum value) | 1.2V @ 250µA | |
| Gate charge (Qg) at different Vgs (maximum value) | 2.4nC @ 10V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 58pF @ 25V | |
| Gate voltage Vgs | ±12V | |
| Pd power dissipation (Max) | 350mW(Ta) | |
| Rds On(Max)@Id,Vgs | 1.6 Ohms@50mA,5V | |
| working temperature | -55°C~150°C(TJ) | |
| Package/Enclosure | TO-236-3,SC-59,SOT-23-3 | |
| Vgs (th) at different IDs (maximum value) | 1.2V @ 250µA | |
| Gate charge (Qg) at different Vgs (maximum value) | 2.4nC | |
| Voltage, coupled to gate charge (Qg) (maximum) @ Vgs | 10V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 58pF | |
| Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds | 25V | |
| Power Rating | 350mW(Ta) | |
| Rds On(Max)@Id,Vgs | 1.6 ohms @ 50mA, 5V | |
| working temperature | -55°C~150°C(TJ) |
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