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Power MOSFETs 12A 2W 8.8mΩ@12A,10V 30V ±20V HSMT-8 N-Channel -55°C~150°C

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MPN RQ3E120GNTB
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-RQ3E120GNTB
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 12A 2W 8.8mΩ@12A,10V 30V ±20V HSMT-8 N-Channel -55°C~150°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Continuous drain current Id 12A
Pd power dissipation (Max) 2W
QG gate charge 10nC
Rds On(Max)@Id,Vgs 8.8mΩ@12A,10V
Drain source voltage Vds 30V
Gate voltage Vgs ±20V
rise time 4.5ns
Descent time 3.4ns
Typical shutdown delay time 25.5ns
Typical connection delay time 9.6ns
Package/Enclosure HSMT-8
FET type N-Channel
Forward transconductance - minimum value 10S
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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In Stock :  1,470

Qty. Unit Price Ext. Price
70+ $0.315 $22.05
100+ $0.2436 $24.36
300+ $0.1951 $58.53
500+ $0.1866 $93.3
1,000+ $0.1793 $179.3

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 70 Mult. 1

Special Note

Production Year: 2022

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