SiC MOSFET
| MPN | SCT3060ALGC11 |
|---|---|
| Mfr. |
ROHM Semiconductor
Authorized Distributor
|
| Oneyac # | A33-SCT3060ALGC11-0 |
| Supplier | Oneyac |
| Product Cycle |
Production |
| Unleaded/RoHs |
Lead Free/Rohs
|
| Description | SCT3060AL Series 650 V 39 A 78 mOhm N-Channel SiC Power Mosfet - TO-247N |
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| Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | SiC MOSFET | |
| Drive voltage @ Rds On (Max), Rds On (Min) | 18V | |
| Vgs (th) at different IDs (maximum value) | 5.6V @ 6.67mA | |
| Gate charge (Qg) at different Vgs (maximum value) | 58nC @ 18V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 852pF @ 500V | |
| working temperature | 175°C(TJ) | |
| Package/Enclosure | TO-247-3 | |
| Continuous drain current Id | 39A | |
| Pd power dissipation (Max) | 165W | |
| QG gate charge | 58nC | |
| Rds On(Max)@Id,Vgs | 60mΩ | |
| Drain source voltage Vds | 650V | |
| Gate voltage Vgs | 5.6V | |
| rise time | 37ns | |
| Descent time | 21ns | |
| Typical shutdown delay time | 34ns | |
| Typical connection delay time | 19ns | |
| Series | SCT3x | |
| Number of channels | 1Channel | |
| to configure | Single |
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