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Universal MOSFETs 1.9A(Ta) ±20V 500mW(Ta) 60m Ohms@2.2A,10V -55°C~150°C(TJ) TO-236-3,SC-59,SOT-23-3 SuperSOT N-Channel 30V 1.9A 60 milliohms @ 2.2A, 10V -55°C ~ 150°C(TJ)

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MPN FDN357N
Mfr. ON Semiconductor
Oneyac # A36-FDN357N
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor

Documents

Datasheet

No Datasheet

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFETs
Continuous drain current Id 1.9A(Ta)
Gate voltage Vgs ±20V
Pd power dissipation (Max) 500mW(Ta)
Rds On(Max)@Id,Vgs 60m Ohms@2.2A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
Package/Enclosure SuperSOT
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 1.9A
Rds On(Max)@Id,Vgs 60 milliohms @ 2.2A, 10V
working temperature -55°C ~ 150°C(TJ)
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In Stock :  6,878

Qty. Unit Price Ext. Price
40+ $0.1961 $7.844
100+ $0.1502 $15.02
750+ $0.1255 $94.125
1,500+ $0.1141 $171.15

Full Reel (Order in multiples of 3000)

3,000+ $0.1057 $317.1

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 40 Mult. 1

Special Note

Production Date: 24+

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