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Universal MOSFETs 1.9A(Ta) ±20V 500mW(Ta) 60m Ohms@2.2A,10V -55°C~150°C(TJ) TO-236-3,SC-59,SOT-23-3 SuperSOT N-Channel 30V 1.9A 60 milliohms @ 2.2A, 10V -55°C~150°C(TJ)

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MPN FDN357N
Mfr. ON Semiconductor
Oneyac # A36-FDN357N
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor

Documents

Datasheet

No Datasheet

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFETs
Continuous drain current Id 1.9A(Ta)
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 5.9nC @ 5V
Input capacitance (Ciss) at different Vds (maximum value) 235pF @ 10V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 500mW(Ta)
Rds On(Max)@Id,Vgs 60m Ohms@2.2A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
Package/Enclosure SuperSOT
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 1.9A
Vgs (th) at different IDs (maximum value) 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 5.9nC @ 5V
Input capacitance (Ciss) at different Vds (maximum value) 235pF @ 10V
Power Rating 500mW(Ta)
Rds On(Max)@Id,Vgs 60 milliohms @ 2.2A, 10V
working temperature -55°C~150°C(TJ)
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In Stock :  6,510

Qty. Unit Price Ext. Price
40+ $0.1781 $7.124
100+ $0.1365 $13.65
750+ $0.1138 $85.35
1,500+ $0.1035 $155.25

Full Reel (Order in multiples of 3000)

3,000+ $0.0959 $287.7

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
For L/T orders  consult CS for MOQ.

Special Note

Production Date: 24+

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