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Power MOSFETs -55°C~150°C(TJ) SOIC-8 20.5A 34.7W 6.6mΩ@20A,10V 40V ±20V N-Channel

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MPN SIR422DP-T1-GE3
Mfr. Vishay
Authorized Distributor
Oneyac # A36-SIR422DP-T1-GE3
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description MOSFET

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
working temperature -55°C~150°C(TJ)
Package/Enclosure SOIC-8
Continuous drain current Id 20.5A
Pd power dissipation (Max) 34.7W
Rds On(Max)@Id,Vgs 6.6mΩ@20A,10V
Drain source voltage Vds 40V
Gate voltage Vgs ±20V
FET type N-Channel
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In Stock :  28,518

Qty. Unit Price Ext. Price
20+ $0.4033 $8.066
100+ $0.338 $33.8
750+ $0.3129 $234.675
1,500+ $0.2976 $446.4

Full Reel (Order in multiples of 3000)

3,000+ $0.2782 $834.6

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 20 Mult. 1

Special Note

Production Date: Within 2 years

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