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Small signal MOSFET 12V 800mW(Ta) 67mΩ@2.5A,4.5V 150°C(TJ) TUMT N-Channel 30V 2.5A

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MPN RTF025N03TL
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-RTF025N03TL
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description N-Channel 0.8 W 30 V 98 mOhm Surface Mount 2.5 V Drive MosFet - TUMT-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Small signal MOSFET
Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
Vgs (th) at different IDs (maximum value) 1.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 5.2nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 270pF @ 10V
Gate voltage Vgs 12V
Pd power dissipation (Max) 800mW(Ta)
Rds On(Max)@Id,Vgs 67mΩ@2.5A,4.5V
working temperature 150°C(TJ)
Package/Enclosure TUMT
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 2.5A
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In Stock :  70

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