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Universal MOSFETs 4A(Ta) ±20V 3W(Ta) 100m Ohms@4A,10V -65°C~150°C(TJ) TO-261-4,TO-261AA 4A N-Channel 60V 100 milliohms @ 4A, 10V -65°C ~ 150°C(TJ) 4 A 180 m0hms -20 V、+20 V SOT-223 enhance 6.7*3.7*1.7mm 250 pF @ 30 V

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MPN NDT3055
Mfr. ON Semiconductor
Oneyac # A36-NDT3055
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 60 V 0.1 O SMT Enhancement Mode Field Effect Transistor SOT-223

Documents

Datasheet

No Datasheet

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFETs
Continuous drain current Id 4A(Ta)
Gate voltage Vgs ±20V
Pd power dissipation (Max) 3W(Ta)
Rds On(Max)@Id,Vgs 100m Ohms@4A,10V
working temperature -65°C~150°C(TJ)
Package/Enclosure TO-261-4,TO-261AA
Continuous drain current Id 4A
FET type N-Channel
Drain source voltage Vds 60V
Rds On(Max)@Id,Vgs 100 milliohms @ 4A, 10V
working temperature -65°C ~ 150°C(TJ)
Continuous drain current Id 4 A
Rds On(Max)@Id,Vgs 180 m0hms
Gate voltage Vgs -20 V、+20 V
Package/Enclosure SOT-223
FET type enhance
Package/Enclosure 6.7*3.7*1.7mm
Drain source voltage Vds 250 pF @ 30 V
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In Stock :  8,602

Qty. Unit Price Ext. Price
30+ $0.2434 $7.302
100+ $0.1947 $19.47
1,000+ $0.1739 $173.9
2,000+ $0.1641 $328.2

Full Reel (Order in multiples of 4000)

4,000+ $0.1558 $623.2

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 4,000 ETD HK 1~2 Weeks
Min. 30 Mult. 1

Special Note

Production Date: 25+

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