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Universal MOSFETs ±8V 500mW(Ta) 65m Ohms@2.2A,4.5V -55°C~150°C(TJ) SuperSOT N-Channel 30V 2.2A 2.2A(Ta) 65 milliohms @ 2.2A, 4.5V -55°C~150°C(TJ) SuperSOT-3 TO-236-3,SC-59,SOT-23-3

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MPN FDN337N
Mfr. ON Semiconductor
Oneyac # A3-FDN337N-2
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3

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Datasheet

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Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFETs
Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
Vgs (th) at different IDs (maximum value) 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 9nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 300pF @ 10V
Gate voltage Vgs ±8V
Pd power dissipation (Max) 500mW(Ta)
Rds On(Max)@Id,Vgs 65m Ohms@2.2A,4.5V
working temperature -55°C~150°C(TJ)
Package/Enclosure SuperSOT
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 2.2A
Continuous drain current Id 2.2A(Ta)
Vgs (th) at different IDs (maximum value) 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 9nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 300pF @ 10V
Power Rating 500mW(Ta)
Rds On(Max)@Id,Vgs 65 milliohms @ 2.2A, 4.5V
working temperature -55°C~150°C(TJ)
Package/Enclosure SuperSOT-3
Package/Enclosure TO-236-3,SC-59,SOT-23-3
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