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Power MOSFET ±20V 540mW(Ta) -55°C~150°C(TJ) 600mΩ@600mA,10V P-Channel 30V 0.76A Micro3™/SOT-23

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MPN IRLML5103TRPBF
Mfr. Infineon
Oneyac # A-IRLML5103TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single P-Channel 30 V 1 Ohm 5.1 nC 540 W Generation V SMT Mosfet - SOT-23

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Vgs (th) at different IDs (maximum value) 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 5.1nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 75pF @ 25V
Pd power dissipation (Max) 540mW(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 5.1nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 75pF @ 25V
Rds On(Max)@Id,Vgs 600mΩ@600mA,10V
FET type P-Channel
Drain source voltage Vds 30V
Continuous drain current Id 0.76A
Package/Enclosure Micro3™/SOT-23
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