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Power MOSFETs N-Channel TO-220-3 150°C(TJ)

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MPN R8009KNXC7G
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-R8009KNXC7G-1
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description High-speed Switching Nch 800V 9A Power MOSFET

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Current at 25 ° C - Continuous Drain (Id) 9A(Ta)
FET type N-Channel
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 600 milliohms @ 4.5A, 10V
Vgs (th) (maximum value) for different IDs 4.5V @ 5mA
Input capacitance (Ciss) at different Vds (maximum value) 900 pF @ 100 V
Gate charge (Qg) at different Vgs (maximum value) 27 nC @ 10 V
Power dissipation (maximum value) 59W(Tc)
Package/Enclosure TO-220-3
working temperature 150°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 800 V
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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In Stock :  200

Qty. Unit Price Ext. Price
3+ $6.9052 $20.7156
5+ $4.1056 $20.528
10+ $3.3303 $33.303
30+ $2.8118 $84.354
50+ $2.7088 $135.44
100+ $2.6313 $263.13
200+ $2.5925 $518.5

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 1,000 ETD HK 1~2 Weeks
Min. 3 Mult. 1

Special Note

Production Year: 2025

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