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Power MOSFET 650V 31.2A 110mΩ 20V 277.8W N-Channel -55°C~150°C

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MPN IPP65R110CFD
Other # IPP65R110CFDXKSA1
Mfr. Infineon
Oneyac # A-IPP65R110CFD
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description 650V 31.2A 110mΩ 20V 277.8W N-Channel -55°C~150°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Drain source voltage Vds 650V
Continuous drain current Id 31.2A
Rds On(Max)@Id,Vgs 110mΩ
Gate voltage Vgs 20V
Pd power dissipation (Max) 277.8W
FET type N-Channel
working temperature -55°C~150°C
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