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Power MOSFET 20A 3W 4.6mΩ 30V 2.5V HSOP-8 N-Channel -55°C~150°C

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MPN RS1E200GNTB
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A-RS1E200GNTB
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 20A 3W 4.6mΩ 30V 2.5V HSOP-8 N-Channel -55°C~150°C

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Continuous drain current Id 20A
Pd power dissipation (Max) 3W
QG gate charge 16.8nC
Rds On(Max)@Id,Vgs 4.6mΩ
Drain source voltage Vds 30V
Gate voltage Vgs 2.5V
rise time 7.2ns
Descent time 8.4ns
Typical shutdown delay time 34.7ns
Typical connection delay time 13.2ns
Package/Enclosure HSOP-8
FET type N-Channel
Forward transconductance - minimum value 18S
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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