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Small signal MOSFET P channel TO-236-3,SC-59,SOT-23-3 -55°C ~ 150°C(TJ) Vehicle regulations

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MPN BSS314PEH6327XTSA1
Other # BSS314PE H6327
Mfr. Infineon
Oneyac # A-BSS314PEH6327XTSA1
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description MOSFET P-CH 30V 1.5A SOT23-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Small signal MOSFET
Current at 25 ° C - Continuous Drain (Id) 1.5A(Ta)
FET type P channel
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 140 milliohms @ 1.5A, 10V
Vgs (th) (maximum value) for different IDs 2V @ 6.3uA
Input capacitance (Ciss) at different Vds (maximum value) 294pF @ 15V
Gate charge (Qg) at different Vgs (maximum value) 2.9nC @ 10V
Power dissipation (maximum value) 500mW(Ta)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
working temperature -55°C ~ 150°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 30V
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
Product Features Vehicle regulations
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