Power MOSFET N channels TO-247-3 -55°C ~ 150°C(TJ)
| MPN | IPW60R041P6FKSA1 |
|---|---|
| Other # | IPW60R041P6 |
| Mfr. | Infineon |
| Oneyac # | A-IPW60R041P6FKSA1 |
| Supplier | Oneyac |
| Unleaded/RoHs |
Details in the datasheet
|
| Description | MOSFET N-CH 600V 77.5A TO247-3 |
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| Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | Power MOSFET | |
| Current at 25 ° C - Continuous Drain (Id) | 77.5A(Tc) | |
| FET type | N channels | |
| Vgs (maximum value) | ±20V | |
| On resistance at different Id and Vgs (maximum value) | 41 milliohms @ 35.5A, 10V | |
| Vgs (th) (maximum value) for different IDs | 4.5V @ 2.96mA | |
| Input capacitance (Ciss) at different Vds (maximum value) | 8180pF @ 100V | |
| Gate charge (Qg) at different Vgs (maximum value) | 170nC @ 10V | |
| Power dissipation (maximum value) | 481W(Tc) | |
| Package/Enclosure | TO-247-3 | |
| working temperature | -55°C ~ 150°C(TJ) | |
| technology | MOSFET (Metal Oxide) | |
| Leakage source voltage (Vdss) | 600V | |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
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In Stock : 0
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ : Inquiry | ||
| MPQ | 30 | ETD HK | Contact Us |
|---|---|---|---|
| Min. | 1 | Mult. | 1 |
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