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Power MOSFET ±20V 1.1W(Ta) 50mΩ@4.1A,10V -55°C~150°C(TJ) SC-59 P-Channel 30V 4A

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MPN DMG3407SSN-7
Mfr. Diodes Incorporated
Oneyac # A3-DMG3407SSN-7
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description ±20V 1.1W(Ta) 50mΩ@4.1A,10V -55°C~150°C(TJ) SC-59 P-Channel 30V 4A

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 16nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 700pF @ 15V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 1.1W(Ta)
Rds On(Max)@Id,Vgs 50mΩ@4.1A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure SC-59
FET type P-Channel
Drain source voltage Vds 30V
Continuous drain current Id 4A
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