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SiC MOSFET 

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MPN SCT3060ALGC11
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-SCT3060ALGC11
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description SCT3060AL Series 650 V 39 A 78 mOhm N-Channel SiC Power Mosfet - TO-247N

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category SiC MOSFET
Drive voltage @ Rds On (Max), Rds On (Min) 18V
Vgs (th) at different IDs (maximum value) 5.6V @ 6.67mA
Gate charge (Qg) at different Vgs (maximum value) 58nC @ 18V
Input capacitance (Ciss) at different Vds (maximum value) 852pF @ 500V
working temperature 175°C(TJ)
Package/Enclosure TO-247-3
Continuous drain current Id 39A
Pd power dissipation (Max) 165W
QG gate charge 58nC
Rds On(Max)@Id,Vgs 60mΩ
Drain source voltage Vds 650V
Gate voltage Vgs 5.6V
rise time 37ns
Descent time 21ns
Typical shutdown delay time 34ns
Typical connection delay time 19ns
Series SCT3x
Number of channels 1Channel
to configure Single
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