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Power MOSFET N channels TO-247-3 -55°C ~ 150°C(TJ)

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MPN IPW60R075CPFKSA1
Other # IPW60R075CP
Mfr. Infineon
Oneyac # A-IPW60R075CPFKSA1
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description MOSFET N-CH 650V 39A TO247-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Current at 25 ° C - Continuous Drain (Id) 39A(Tc)
FET type N channels
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 75 milliohms @ 26A, 10V
Vgs (th) (maximum value) for different IDs 3.5V @ 1.7mA
Input capacitance (Ciss) at different Vds (maximum value) 4000pF @ 100V
Gate charge (Qg) at different Vgs (maximum value) 116nC @ 10V
Power dissipation (maximum value) 313W(Tc)
Package/Enclosure TO-247-3
working temperature -55°C ~ 150°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 650V
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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